Improved perovskite triboelectric nanogenerators by effective defect passivation and interface modulation

Perovskite-based triboelectric nanogenerators (TENGs) have obtained wide attention and investigation due to their excellent dielectric electrical properties, as well the diversity of perovskite materials. In this work, phenethyl ammonium iodide (PEAI) was applied tailor interface MAPbI 3 films, form a 2D/3D heterojunction, passivate defects films. The TENGs after PEAI passivation achieved significant improvement in voltage current density with an increase output from 33.3 40.1 V, improved 9.1 10.1 mA/m 2 . properties might be attributed changes charge density, carrier mobility, reduced interfacial combination by effective defect passivation, favorable transporting constructing heterojunctions for effect built-in electric field. This work demonstrates that modification is one feasible methods improving performance supplies further possibilities high-performance perovskite-based TENGs.